PMV170UN single N-channel Trench MOSFET

NXP Semiconductors

Description

PMV170UN 3 August 2012 20 V, single N-channel Trench MOSFET Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Datasheet Specifications

Part number: PMV170UN
Manufacturer: NXP ↗ Semiconductors
File Size: 195.50 KB
Datasheet: PMV170UN-NXPSemiconductors.pdf
Description: single N-channel Trench MOSFET

Features

* Low threshold voltage
* Very fast switching

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS =

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PMV170UN single N-channel Trench MOSFET NXP Semiconductors

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