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PMV32UP MOSFET

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Description

SO T2 PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev.1 * 11 March 2011 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Features

* 1.8 V drain-source on-state resistance rated
* Very fast switching

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 2

PMV32UP Distributors

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