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PMV30XPEA P-channel MOSFET

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Description

PMV30XPEA 20 V, P-channel Trench MOSFET 30 October 2015 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Features

* Trench MOSFET technology
* Very fast switching
* Enhanced power dissipation capability: Ptot = 980 mW
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

PMV30XPEA Distributors

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P-channel MOSFET nexperia
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