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PMV16UN N-channel Trench MOSFET

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Description

www.DataSheet.co.kr SO T2 PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev.1 * 4 April 2011 Product data sheet 1.Product profile 1.1 Gener.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Features

* Low threshold voltage
* Very fast switching

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25

PMV16UN Distributors

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PMV16UN N-channel Trench MOSFET NXP Semiconductors
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