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PMV170EPA 80V P-channel Trench MOSFET

PMV170EPA Description

PMV170EPA 80 V, P-channel Trench MOSFET 1 October 2025 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

PMV170EPA Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* Extended temperature range Tj = 175 °C

PMV170EPA Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drai

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80V P-channel Trench MOSFET nexperia
nexperia PMV170EPA-like datasheet