PMV130ENEA N-channel Trench MOSFET

nexperia

Description

PMV130ENEA 40 V, N-channel Trench MOSFET 10 April 2019 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Datasheet Specifications

Part number: PMV130ENEA
Manufacturer: nexperia ↗
File Size: 260.75 KB
Datasheet: PMV130ENEA-nexperia.pdf
Description: N-channel Trench MOSFET

Features

* Logic-level compatible
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

PMV130ENEA Distributors

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PMV130ENEA N-channel Trench MOSFET nexperia

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