PMZ1200UPE P-channel Trench MOSFET

NXP

Description

SOT883 PMZ1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package usi.

📥 Download Datasheet

PMZ1200UPE Datasheet Preview — Preview of PMZ1200UPE PDF

Datasheet Specifications

Part number: PMZ1200UPE
Manufacturer: NXP ↗
File Size: 210.92 KB
Datasheet: PMZ1200UPE-NXP.pdf
Description: P-channel Trench MOSFET

Features

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

PMZ1200UPE Distributors

📁 Related Datasheet

PMZ1000UN PMZ250UN PMZ270XN PMZ290UNE PMZ350XN PMZ390UN

📌 All Tags

PMZ1200UPE P-channel Trench MOSFET NXP

NXP PMZ1200UPE-like datasheet