PMZ1200UPE - P-channel Trench MOSFET

NXP

The PMZ1200UPE by NXP is a P-channel Trench MOSFET. Below is the official datasheet preview.

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PMZ1200UPE P-channel Trench MOSFET by NXP - Datasheet Preview — Official preview page of the **PMZ1200UPE** P-channel Trench MOSFET datasheet (NXP).

Datasheet Details

Part number	PMZ1200UPE
Manufacturer	NXP
File Size	210.92 KB
Description	P-channel Trench MOSFET
Datasheet	PMZ1200UPE-NXP.pdf
Additional preview pages of the PMZ1200UPE datasheet.

PMZ1200UPE Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
Low threshold voltage.
Very fast switching.
ElectroStatic Discharge (ESD) protection > 2 kV HBM.
Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm 3.

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Published: Feb 24, 2016 |