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PMZ200UNE N-channel Trench MOSFET

PMZ200UNE Description

SOT883 PMZ200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package usi.

PMZ200UNE Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection: 2 kV HBM

PMZ200UNE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-sou

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Datasheet Details

Part number
PMZ200UNE
Manufacturer
NXP ↗
File Size
227.55 KB
Datasheet
PMZ200UNE-NXP.pdf
Description
N-channel Trench MOSFET

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N-channel Trench MOSFET NXP
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