PZ1418B15U - NPN microwave power transistor

NXP

PZ1418B15U Datasheet Preview — Preview of PZ1418B15U PDF

Datasheet Details

Part number	PZ1418B15U
Manufacturer	NXP ↗
File Size	81.53 KB
Description	NPN microwave power transistor
Datasheet	PZ1418B15U_PhilipsSemiconductors.pdf

PZ1418B15U Product details

Description

1 c b 3 e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.Top view MAM314 Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common base class-B wideband ampliﬁer.MODE OF OPERATION Class-B f (GHz) 1.4 to 1.8 VCC (V) 28 PL (W) ≥12.5 Gp (dB) ≥7 ηC (%) ≥38 Zi; ZL (Ω) see Figs 6 and 7 WARNING Product and environmental safety - toxic materials Thi

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output prematching ensures good stability and easy broadband use.

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Published: Apr 16, 2005 |