PZ1418B30U

NPN microwave power transistors

NXP

PZ1418B30U Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry g

PZ1418B30U General Description

handbook, halfpage 1 c b 3 e 2 DESCRIPTION Top view MAM314 NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a c.

PZ1418B30U Datasheet (131.20 KB)

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Datasheet Details

Part number:

PZ1418B30U

Manufacturer:

NXP ↗

File Size:

131.20 KB

Description:

Npn microwave power transistors.
DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors Product speciﬁcation Supersedes data of June 1.

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PZ1418B30U NPN microwave power transistors NXP

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PZ1418B30U Features

PZ1418B30U General Description

Datasheet Details

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