PZ1418B30U - NPN microwave power transistors

NXP

PZ1418B30U Datasheet Preview — Preview of PZ1418B30U PDF

Datasheet Details

Part number	PZ1418B30U
Manufacturer	NXP ↗
File Size	131.20 KB
Description	NPN microwave power transistors
Datasheet	PZ1418B30U_PhilipsSemiconductors.pdf

PZ1418B30U Product details

Description

handbook, halfpage 1 c b 3 e 2 DESCRIPTION Top view MAM314 NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common base class-B wideband ampliﬁer.TYPE NUMBER PZ1418B30U PZ1721B25U PZ2024B20U f (GHz) 1.4 to 1.8 1.7 to 2.1 2 to 2.4 VCC (V) 28 28 28 PL (W) ≥27 ≥25 ≥20 WARNING Product and environmental safety -

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output prematching ensures good stability and easy broadband use.

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Published: Apr 16, 2005 |