RZ1214B65Y Datasheet, transistor equivalent, NXP

RZ1214B65Y Features

• Transistor
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR

PDF File Details

Part number:

RZ1214B65Y

Manufacturer:

NXP (https://www.nxp.com/)

File Size:

57.49kb

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📄 Datasheet

Description:

Npn microwave power transistor. 1 c b e 2 MAM314 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package wit

RZ1214B65Y Application

• Applications
• Intended for use in common base class C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz

TAGS

RZ1214B65Y

NXP

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