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RZ1214B65Y Datasheet - NXP

RZ1214B65Y NPN microwave power transistor

1 c b e 2 MAM314 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-C wideban.

RZ1214B65Y Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry gi

RZ1214B65Y Datasheet (57.49 KB)

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Datasheet Details

Part number:

RZ1214B65Y

Manufacturer:

NXP ↗

File Size:

57.49 KB

Description:

Npn microwave power transistor.

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