* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry gi
RZ1214B35Y Datasheet (69.53 KB)
RZ1214B35Y
69.53 KB
Npn microwave power transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
RZ1214B35Y NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 18
Philips .
📁 Related Datasheet
RZ1214B65Y - NPN microwave power transistor
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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D034
RZ1214B65Y NPN microwave power transistor
Product specification Supersedes data of 1997 Feb 18 199.
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RZ1235 - Avalanche Diodes with built-in Thyristor
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Avalanche Diodes with built-in Thyristor
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50Hz Half-cycle Sinewave Single Shot
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RZ1040 - Avalanche Diodes with built-in Thyristor
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