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RZ1214B35Y - NPN microwave power transistor

Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

Fig.1 Simplified outline and symbol.

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input matching ensures good stability and allows an easier design of wideband circuits.

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Datasheet Details

Part number RZ1214B35Y
Manufacturer NXP
File Size 69.53 KB
Description NPN microwave power transistor
Datasheet download datasheet RZ1214B35Y Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input matching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS • Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.
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