RZ1214B35Y Datasheet, transistor equivalent, NXP

RZ1214B35Y Features

• Transistor
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR

PDF File Details

Part number:

RZ1214B35Y

Manufacturer:

NXP (https://www.nxp.com/)

File Size:

69.53kb

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📄 Datasheet

Description:

Npn microwave power transistor. 1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the bas

RZ1214B35Y Application

• Applications
• Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band. 2 3 handbook,

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RZ1214B35Y

NXP

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