RZ1214B35Y Description
1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Top view MAM314 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class-C wideband amplifier.
RZ1214B35Y Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input matching ensures good stability and allows an easier design of wideband circuits
RZ1214B35Y Applications
- mon base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band
- SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di