RZ1214B35Y Datasheet (PDF) Download
NXP Semiconductors
RZ1214B35Y

Key Features

  • Interdigitated structure provides high emitter efficiency
  • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input matching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS
  • Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band. 2 3 handbook, halfpage