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RZ1214B35Y NPN microwave power transistor

RZ1214B35Y Description

DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product speciļ¬cation Supersedes data of June 1992 1997 Feb 18 Philips .
1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to th.

RZ1214B35Y Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry gi

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