RZ1214B35Y Datasheet (NXP) - NPN microwave power transistor

RZ1214B35Y, NPN microwave power transistor

1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

Top view MAM314 Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class

RZ1214B35Y Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry gi