RZ1214B35Y NPN microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 18 Philips .
1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to th.

📥 Download Datasheet

RZ1214B35Y Datasheet Preview — Preview of RZ1214B35Y PDF

Datasheet Specifications

Part number: RZ1214B35Y
Manufacturer: NXP ↗
File Size: 69.53 KB
Datasheet: RZ1214B35Y_PhilipsSemiconductors.pdf
Description: NPN microwave power transistor

Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry gi

RZ1214B35Y Distributors

📁 Related Datasheet

RZ1200 RZ1235 RZ1030 RZ1040 RZ1055 RZ1065

📌 All Tags

RZ1214B35Y NPN microwave power transistor NXP

NXP RZ1214B35Y-like datasheet

RZ1214B65Y