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CL04-12 450mA 12kV High Voltage Microwave Oven Rectifiers Diodes -----------------------------------------------------------------------------------

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CL01-12 350mA 12kV High Voltage Microwave Oven Rectifiers Diodes -----------------------------------------------------------------------------------

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N-N M/M 18GHZ FLANGE ADAPTER (26.4) 1.04 in SPECIFICATIONS ELECTRICAL FREQUENCY: 0-18 GHZ IMPEDANCE: 50 OHMS VSWR: 1.15:1 MAX 1.93 (49.0) 5/16 M

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SD1528-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 WATTS (t

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FMHR0150 DATA SHEET Temperature Conditioned Low Loss SMA Female Bulkhead to N Female Bulkhead Cable LL142 Coax Temperature conditioned low loss SMA

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0204-125 125 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION The 0204-125 is a double input matched COMMON EMITTER broadband trans

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3104/D The RF Line Microwave Linear Power Transistors • Designed for Class A, Common Emitter

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RF AMPLIFIER MODEL BXMP1003 Ultra High IP2: +93 dBm Typical High 3rd Order Intercept: +49 dBm Typical High Power 1 dB Comp.: +32 dBm Typical Spe

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HMC-C033 v00.0806 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER MODULE, 24 - 33 GHz OUTPUT Features High Output Power: +17 dBm 4 FREQUENCY MULTIPLIERS

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www.DataSheet4U.com RF AMPLIFIER MODEL TM3045 Low Noise Figure: 2 dB Typical Medium Gain: 15 dB Typical Operating Temp. - 40 ºC to +85 ºC Environment

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Model A100N50X4 Chip Termination 100 Watts, 50Ω Description The A100N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as an a

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Data Sheet ADMFM2000 Dual-Channel, 0.5 GHz to 32 GHz, Microwave Downconverter FEATURES ► Dual-channel, 0.5 GHz to 32 GHz receiver ► Integrated LNA ►

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__ Microwave Carbon Rod Resistors _ MECHANICAL SPECIFICATIONS Substrate: Alumina or Beryllium Oxide Ceramic (Note: Letter P Denotes Beryllium Oxide.

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Data Sheet Description www.DataSheet4U.com Mechanical Dimensions .866 .285 25 (6,4) Faston Terminal 1.00 Min. .050 .172 DIA. 3.51 Features n HIG

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HMC744LC3C v01.1208 13 Gbps, FAST RISE TIME 1:2 FANOUT BUFFER w/ PROGRAMMABLE OUTPUT VOLTAGE & POSITIVE SUPPLY Typical www.datasheet4u.com Applicatio

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SD1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . . . . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION P OUT = 70 W MI

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MICROWAVE POWER GaAs FET TIM1213-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN G1dB= 5.5d

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SD1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . . . . 1.65 GHz 28 VOLTS GOLD METALLIZED SYSTEM POLYSILICON SITE BALLASTING

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SD1528-06 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 W (typ.) I

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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