TIM5964-4A Datasheet, Fet, Toshiba Semiconductor

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TIM5964-4A

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Toshiba ↗ Semiconductor

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📄 Datasheet

Description:

Microwave power gaas fet.

TAGS

TIM5964-4A

Toshiba Semiconductor

📁 Related Datasheet

TIM5964-45SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET TIM5964-45SL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 9.0dB.

TIM5964-4SL-422 - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN G1dB= 8.0dB(Min.) at 5.85GHz to 6.75GHz ･HERMET.

TIM5964-4UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE.

TIM5964-12UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET TIM5964-12UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 41.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0d.

TIM5964-16SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
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TIM5964-16SL-422 - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ･LOW IN.

TIM5964-16UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET TIM5964-16UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0d.

TIM5964-25UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 44.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE.

TIM5964-30SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET .. MICROWAVE SEMICONDUCTOR TIM5964-30SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 d.

TIM5964-30UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE.