Datasheet4U Logo Datasheet4U.com

TIM5964-30UL

MICROWAVE POWER GaAs FET

TIM5964-30UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

TIM5964-30UL Datasheet (278.00 KB)

Preview of TIM5964-30UL PDF

Datasheet Details

Part number:

TIM5964-30UL

Manufacturer:

Toshiba ↗

File Size:

278.00 KB

Description:

Microwave power gaas fet.

📁 Related Datasheet

TIM5964-30SL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-35SLA MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-35SLA-251 MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-35SLA-422 MICROWAVE POWER GaAs FET (Toshiba)

TIM5964-12UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-16SL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-16SL-422 MICROWAVE POWER GaAs FET (Toshiba)

TIM5964-16UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-25UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-45SL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TAGS

TIM5964-30UL MICROWAVE POWER GaAs FET Toshiba

Image Gallery

TIM5964-30UL Datasheet Preview Page 2

TIM5964-30UL Distributor