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TIM5964-30SL Datasheet - Toshiba Semiconductor

TIM5964-30SL_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TIM5964-30SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

193.17 KB

Description:

Microwave power gaas fet.

TIM5964-30SL, MICROWAVE POWER GaAs FET

TIM5964-30SL Features

* n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS O

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📌 All Tags

TIM5964-30SL MICROWAVE POWER GaAs FET Toshiba Semiconductor
Toshiba Semiconductor TIM5964-30SL-like datasheet
TIM5964-35SLA
TIM5964-35SLA-251
TIM5964-12UL
TIM5964-16SL
TIM5964-16UL