Part number:
TIM5964-30SL
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
193.17 KB
Description:
Microwave power gaas fet.
TIM5964-30SL_ToshibaSemiconductor.pdf
Datasheet Details
TIM5964-30SL Features
* n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS O
TIM5964-30SL_ToshibaSemiconductor.pdf
Datasheet Details
TIM5964-30SL
Toshiba ↗ Semiconductor
193.17 KB
Microwave power gaas fet.
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TIM5964-30SL Distributor