Datasheet4U Logo Datasheet4U.com

TIM5964-30SL

MICROWAVE POWER GaAs FET

TIM5964-30SL Features

* n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS O

TIM5964-30SL Datasheet (193.17 KB)

Preview of TIM5964-30SL PDF

Datasheet Details

Part number:

TIM5964-30SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

193.17 KB

Description:

Microwave power gaas fet.

📁 Related Datasheet

TIM5964-30UL MICROWAVE POWER GaAs FET (Toshiba)

TIM5964-35SLA MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-35SLA-251 MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-35SLA-422 MICROWAVE POWER GaAs FET (Toshiba)

TIM5964-12UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-16SL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-16SL-422 MICROWAVE POWER GaAs FET (Toshiba)

TIM5964-16UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-25UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-45SL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TAGS

TIM5964-30SL MICROWAVE POWER GaAs FET Toshiba Semiconductor

Image Gallery

TIM5964-30SL Datasheet Preview Page 2 TIM5964-30SL Datasheet Preview Page 3

TIM5964-30SL Distributor