TIM5964-30SL Datasheet, Fet, Toshiba Semiconductor

TIM5964-30SL Features

• Fet n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND

PDF File Details

Part number:

TIM5964-30SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

193.17kb

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📄 Datasheet

Description:

Microwave power gaas fet.

TIM5964-30SL Application

• Applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which ma

TAGS

TIM5964-30SL

Toshiba Semiconductor

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