TIM5964-35SLA-251 Datasheet, Fet, Toshiba Semiconductor

TIM5964-35SLA-251 Features

• Fet TIM5964-35SLA-251
• LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level
• HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz
• HIGH EFFI

PDF File Details

Part number:

TIM5964-35SLA-251

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

61.53kb

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📄 Datasheet

Description:

Microwave power gaas fet.

TIM5964-35SLA-251 Application

• Applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which ma

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TIM5964-35SLA-251

Toshiba Semiconductor

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