Datasheet4U Logo Datasheet4U.com

TIM5359-4UL MICROWAVE POWER GaAs FET

TIM5359-4UL Description

.

TIM5359-4UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 10.5dB at 5.3GHz to 5.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Powe

📥 Download Datasheet

Preview of TIM5359-4UL PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TIM5359-4 - POWER GAAS FET (Toshiba Semiconductor)
  • TIM5359-45SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM5964-12UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM5964-16SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM5964-16UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM5964-25UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM5964-30SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM5964-35SLA - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

📌 All Tags

MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM5359-4UL-like datasheet