Datasheet Specifications
- Part number
- TIM5359-4UL
- Manufacturer
- Toshiba ↗
- File Size
- 357.91 KB
- Datasheet
- TIM5359-4UL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 10.5dB at 5.3GHz to 5.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point PoweTIM5359-4UL Distributors
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