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TIM5964-4SL-422

MICROWAVE POWER GaAs FET

TIM5964-4SL-422 Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN G1dB= 8.0dB(Min.) at 5.85GHz to 6.75GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 25.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM5964-4SL-422 RF PERFORMA

TIM5964-4SL-422 Datasheet (384.10 KB)

Preview of TIM5964-4SL-422 PDF

Datasheet Details

Part number:

TIM5964-4SL-422

Manufacturer:

Toshiba ↗

File Size:

384.10 KB

Description:

Microwave power gaas fet.

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TAGS

TIM5964-4SL-422 MICROWAVE POWER GaAs FET Toshiba

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