TIM5964-4SL-422
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Microwave power gaas fet.
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TIM5964-45SL - MICROWAVE POWER GaAs FET
(Toshiba Semiconductor)
MICROWAVE POWER GaAs FET
TIM5964-45SL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN
G1dB= 9.0dB.
TIM5964-4A - MICROWAVE POWER GAAS FET
(Toshiba Semiconductor)
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TIM5964-4UL - MICROWAVE POWER GaAs FET
(Toshiba Semiconductor)
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE.
TIM5964-12UL - MICROWAVE POWER GaAs FET
(Toshiba Semiconductor)
MICROWAVE POWER GaAs FET
TIM5964-12UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 41.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN
G1dB= 10.0d.
TIM5964-16SL - MICROWAVE POWER GaAs FET
(Toshiba Semiconductor)
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TIM5964-16SL-422 - MICROWAVE POWER GaAs FET
(Toshiba)
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN
G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ･LOW IN.
TIM5964-16UL - MICROWAVE POWER GaAs FET
(Toshiba Semiconductor)
MICROWAVE POWER GaAs FET
TIM5964-16UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN
G1dB= 10.0d.
TIM5964-25UL - MICROWAVE POWER GaAs FET
(Toshiba Semiconductor)
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 44.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE.
TIM5964-30SL - MICROWAVE POWER GaAs FET
(Toshiba Semiconductor)
MICROWAVE POWER GaAs FET .. MICROWAVE SEMICONDUCTOR
TIM5964-30SL
TECHNICAL DATA FEATURES
n LOW INTERMODULATION DISTORTION IM3=-45 d.
TIM5964-30UL - MICROWAVE POWER GaAs FET
(Toshiba)
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE.
