Datasheet Specifications
- Part number
- TIM5964-4SL-422
- Manufacturer
- Toshiba ↗
- File Size
- 384.10 KB
- Datasheet
- TIM5964-4SL-422-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN G1dB= 8.0dB(Min. ) at 5.85GHz to 6.75GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 25.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM5964-4SL-422 RF PERFORMATIM5964-4SL-422 Distributors
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