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TIM5964-35SLA-422 MICROWAVE POWER GaAs FET

TIM5964-35SLA-422 Description

MICROWAVE POWER GaAs FET TIM5964-35SLA-422 .

TIM5964-35SLA-422 Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.5dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB= 8.0dB at 5.85GHz to 6.75GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS

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Toshiba TIM5964-35SLA-422-like datasheet