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TIM5359-16UL MICROWAVE POWER GaAs FET

TIM5359-16UL Description

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TIM5359-16UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 10.0dB at 5.3GHz to 5.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-16UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM5359-16UL-like datasheet