Part number:
TIM5359-45SL
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
438.16 KB
Description:
Microwave power gaas fet.
* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-45SL RF PERFORMANCE SPECIFICAT
TIM5359-45SL Datasheet (438.16 KB)
TIM5359-45SL
Toshiba ↗ Semiconductor
438.16 KB
Microwave power gaas fet.
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