Datasheet4U Logo Datasheet4U.com

TIM5359-45SL

MICROWAVE POWER GaAs FET

TIM5359-45SL Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-45SL RF PERFORMANCE SPECIFICAT

TIM5359-45SL Datasheet (438.16 KB)

Preview of TIM5359-45SL PDF

Datasheet Details

Part number:

TIM5359-45SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

438.16 KB

Description:

Microwave power gaas fet.

📁 Related Datasheet

TIM5359-4 POWER GAAS FET (Toshiba Semiconductor)

TIM5359-4UL MICROWAVE POWER GaAs FET (Toshiba)

TIM5359-16UL MICROWAVE POWER GaAs FET (Toshiba)

TIM5964-12UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-16SL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-16SL-422 MICROWAVE POWER GaAs FET (Toshiba)

TIM5964-16UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-25UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-30SL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM5964-30UL MICROWAVE POWER GaAs FET (Toshiba)

TAGS

TIM5359-45SL MICROWAVE POWER GaAs FET Toshiba Semiconductor

Image Gallery

TIM5359-45SL Datasheet Preview Page 2 TIM5359-45SL Datasheet Preview Page 3

TIM5359-45SL Distributor