Datasheet Specifications
- Part number
- TIM5359-45SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 438.16 KB
- Datasheet
- TIM5359-45SL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-45SL RF PERFORMANCE SPECIFICATTIM5359-45SL Distributors
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