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TIM5359-45SL Datasheet - Toshiba Semiconductor

TIM5359-45SL_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TIM5359-45SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

438.16 KB

Description:

Microwave power gaas fet.

TIM5359-45SL, MICROWAVE POWER GaAs FET

TIM5359-45SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-45SL RF PERFORMANCE SPECIFICAT

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📌 All Tags

TIM5359-45SL MICROWAVE POWER GaAs FET Toshiba Semiconductor
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