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TIM5964-8UL

MICROWAVE POWER GaAs FET

TIM5964-8UL Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 39.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ・HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point D

TIM5964-8UL Datasheet (234.48 KB)

Preview of TIM5964-8UL PDF

Datasheet Details

Part number:

TIM5964-8UL

Manufacturer:

Toshiba ↗

File Size:

234.48 KB

Description:

Microwave power gaas fet.

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TAGS

TIM5964-8UL MICROWAVE POWER GaAs FET Toshiba

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