TIM5964-80SL Datasheet, Fet, Toshiba Semiconductor

TIM5964-80SL Features

  • Fet
  • LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
  • HIGH POWER P1dB=49.0dBm at 5.9GHz to 6.4GHz
  • HIGH GAIN G1dB=7.0dB at 5.9GHz

PDF File Details

Part number:

TIM5964-80SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

142.04kb

Download:

📄 Datasheet

Description:

Microwave power gaas fet.

Datasheet Preview: TIM5964-80SL 📥 Download PDF (142.04kb)
Page 2 of TIM5964-80SL Page 3 of TIM5964-80SL

TIM5964-80SL Application

  • Applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which ma

TAGS

TIM5964-80SL
MICROWAVE
POWER
GaAs
FET
Toshiba Semiconductor

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Stock and price

Toshiba America Electronic Components
MICROWAVE POWER GaAs FET 15V 26A 3Pin 7AA02C (Alt: TIM5964-80SL)
EBV Elektronik
TIM5964-80SL
0 In Stock
0
Unit Price : $0
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