TIM5964-80SL

MICROWAVE POWER GaAs FET

Toshiba Semiconductor

* LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level

* HIGH POWER P1dB=49.0dBm at 5.9GHz to 6.4GHz

* HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz

* BROAD BAND INTERNALLY MATCHED FET

* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIF

TIM5964-80SL

Toshiba ↗ Semiconductor

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Microwave power gaas fet.

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TIM5964-80SL MICROWAVE POWER GaAs FET Toshiba Semiconductor

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