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TIM5964-8 Datasheet, Fet, Toshiba Semiconductor

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Part number:

TIM5964-8

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

153.45kb

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📄 Datasheet

Description:

Microwave power gaas fet.

Datasheet Preview: TIM5964-8 📥 Download PDF (153.45kb)
Page 2 of TIM5964-8 Page 3 of TIM5964-8

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TIM5964-12UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET TIM5964-12UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 41.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0d.

TIM5964-16SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
.. .. .. .. .. .

TIM5964-16SL-422 - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ・LOW IN.

TIM5964-16UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET TIM5964-16UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0d.

TIM5964-25UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 44.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ・HERMETICALLY SE.

TIM5964-30SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET .. MICROWAVE SEMICONDUCTOR TIM5964-30SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 d.

TIM5964-30UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 45.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ・HERMETICALLY SE.

TIM5964-35SLA - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ・LOW INTERMODULAT.

TIM5964-35SLA-251 - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET .. MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-35SLA-251 „ LOW INTERMODULATION DISTORTION IM3.

TIM5964-35SLA-422 - MICROWAVE POWER GaAs FET (Toshiba)
MICROWAVE POWER GaAs FET TIM5964-35SLA-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.5dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB.

Stock and price

Toshiba America Electronic Components
MICROWAVE POWER GaAs FET 15V 26A 3Pin 7AA02C (Alt: TIM5964-80SL)
EBV Elektronik
TIM5964-80SL
0 In Stock
0
Unit Price : $0

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TIM5964-8 MICROWAVE POWER GAAS FET Toshiba Semiconductor
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