TIM5964-16UL Datasheet, Fet, Toshiba Semiconductor

TIM5964-16UL Features

• Fet ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 31.5dBm

PDF File Details

Part number:

TIM5964-16UL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

302.52kb

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📄 Datasheet

Description:

Microwave power gaas fet.

TAGS

TIM5964-16UL

Toshiba Semiconductor

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.. .. .. .. .. .

TIM5964-16SL-422 - MICROWAVE POWER GaAs FET (Toshiba)
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TIM5964-25UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE.

TIM5964-35SLA - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ･LOW INTERMODULAT.

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MICROWAVE POWER GaAs FET .. MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-35SLA-251 „ LOW INTERMODULATION DISTORTION IM3.

TIM5964-35SLA-422 - MICROWAVE POWER GaAs FET (Toshiba)
MICROWAVE POWER GaAs FET TIM5964-35SLA-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.5dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB.

TIM5964-45SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET TIM5964-45SL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 9.0dB.