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SI4800 N-channel FET

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Description

SI4800 N-channel TrenchMOS™ logic level FET M3D315 Rev.02 * 17 February 2004 Product data 1.Product profile 1.1 .
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

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Applications

* s Portable appliances s Lithium-ion battery chargers s Notebook computers s DC-to-DC converters. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 9 A s RDSon ≤ 18.5 mΩ 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1 (SO-8), simplified outline and symbol Descrip

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