Si4800DY Datasheet - Vishay

Si4800DY Fast Switching MOSFET

Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0185 @ VGS = 10 V 0.033 @ VGS = 4.5 V ID (A) 9 7 D D D D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4800DY Si4800DY-T1 (with Tape and Reel) 8 7 6 5 D D D D N-Channel MOSFET G S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current (10 ms Pulse .

Si4800DY-Vishay.pdf