N08L1618C2A Datasheet (NanoAmp Solutions) - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

N08L1618C2A, 8Mb Ultra-Low Power Asynchronous CMOS SRAM

3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 I/O12 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enab

NanoAmp Solutions, Inc.

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Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L1618C2A Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits.

The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performanc

N08L1618C2A Features

* Single Wide Power Supply Range 1.65 to 2.2 Volts

* Very low standby current 0.5µA at 1.8V (Typical)

* Very low operating current 1.0mA at 1.8V and 1µs (Typical)

* Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)

* Simple memory control Du