N64T1630C1B Datasheet - NanoAmp Solutions

N64T1630C1B 64Mb Ultra-Low Power Asynchronous CMOS PSRAM

3 A0 A3 A5 A17 A21 A14 A12 A9 2 OE UB I/O10 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 ZZ I/O0 I/O2 VCC VSS I/O6 I/O7 A20 Pin Name A0-A21 WE CE ZZ OE LB UB I/O0-I/O15 VCC VSS VCCQ VSSQ Pin Function Address Inputs Write Enable Input Chip Enable Input Deep Sleep Input Out.

NanoAmp Solutions, Inc. 670 N. McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N64T1630C1B Advance Information 64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M × 16 Bits Overview The N64T1630C1B is an integrated memory device containing a 64 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4,194,304 words by 16 bits. It is designed to be compatible in operation and www.DataSheet4U.com interface to standard 6T S.

N64T1630C1B Features

* Dual voltage rails for optimum power & performance Vcc - 2.7V - 3.3V Vccq - 2.7V to 3.3V

* Fast Cycle Times TACC < 70 nS (60ns future) TPACC < 25 nS

* Very low standby current ISB < 170µA

* Very low operating current Icc < 25mA

* PASR (Partial Array Self Ref

N64T1630C1B_NanoAmpSolutions.pdf