Si6040
Nanxin
403.75kb
N-channel mosfet.
TAGS
📁 Related Datasheet
SI60DC100 - DC Solid-State Relay
(TELEDYNE)
FEATURES/BENEFITS • Latest generation of High Voltage IGBT Technology • Innovative isolated driver ensures fast power transistor turn on and off and t.
Si6404DQ - N-Channel MOSFET
(Vishay)
N-Channel 30-V (D-S) MOSFET
Si6404DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.009 at VGS = 10 V
30 0.010 at VGS = 4.5 V
0.014 at .
Si6413DQ - P-Channel MOSFET
(Vishay)
P-Channel 1.8-V (G-S) MOSFET
Si6413DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = - 4.5 V - 20 0.013 at VGS = - 2.5 V
0..
SI6421DQ - P-Channel MOSFET
(Vishay Siliconix)
.DataSheet.co.kr
Si6421DQ
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0105 @ VGS = -.
SI6423DQ - P-Channel MOSFET
(Vishay Siliconix)
.DataSheet.co.kr
Si6423DQ
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0085 @ VGS = -.
SI6433BDQ - P-Channel 2.5-V (G-S) MOSFET
(Vishay Siliconix)
Click Here & Upgrade
PDF Complete
Documents
Expanded Features Unlimited Pages
SPICE Device Model Si6433BDQ
Vishay Siliconix
P-Channel 2.5-V (G-S).
Si6433DQ - P-Channel 2.5-V (G-S) MOSFET
(Vishay)
Si6433DQ
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–12
rDS(on) (W)
0.06 @ VGS = –4.5 V 0.09 @ VGS = –2.5 V
ID (A)
4.0.
Si6433DQ - 20V P-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
Si6433DQ
July 2001
Si6433DQ
20V P-Channel PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is produced using Fairchild .
SI6434DQ - N-Channel MOSFET
(Vishay Siliconix)
..
Si6434DQ
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30 0.042 @ VGS = 4.5 V
rDS(on) (W)
0.028 @ VGS =.
Si6435ADQ - P-Channel 30-V (D-S) MOSFET
(Vishay)
P-Channel 30-V (D-S) MOSFET
Si6435ADQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.030 at VGS = - 10 V 0.055 at VGS = - 4.5 V
ID .
