SI6433BDQ

P-Channel 2.5-V (G-S) MOSFET

Vishay Siliconix

SI6433BDQ Features

* Unlimited Pages SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS

* P-Channel Vertical DMOS

* Macro Model (Subcircuit Model)

* Level 3 MOS

* Apply for both Linear and Switching Application

* Accurate over the

SI6433BDQ General Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

*55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias .

SI6433BDQ Datasheet (221.10 KB)