SI6467BDQ Datasheet - Vishay Siliconix

SI6467BDQ P-Channel MOSFET

www.DataSheet.co.kr Si6467BDQ New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0125 @ VGS = -4.5 V -12 0.0155 @ VGS = -2.5 V 0.020 @ VGS = -1.8 V ID (A) -8.0 - 7.0 - 6.0 S TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G Source Pins 2, 3, 6 and 7 must be tied common. Si6467BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre.

SI6467BDQ_VishaySiliconix.pdf