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M2S4G64CB8HB5N, M2S1G64CBH4B5P Datasheet - Nanya

M2S4G64CB8HB5N, M2S1G64CBH4B5P, Unbuffered DDR3 SO-DIMM

M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-.
M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N are un-buffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Small Outline Dual In-Line Memory.
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M2S1G64CBH4B5P-Nanya.pdf

This datasheet PDF includes multiple part numbers: M2S4G64CB8HB5N, M2S1G64CBH4B5P. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

M2S4G64CB8HB5N, M2S1G64CBH4B5P

Manufacturer:

Nanya

File Size:

613.51 KB

Description:

Unbuffered DDR3 SO-DIMM

Note:

This datasheet PDF includes multiple part numbers: M2S4G64CB8HB5N, M2S1G64CBH4B5P.
Please refer to the document for exact specifications by model.

Features

* Performance: Speed Sort DIMM CAS Latency fck
* Clock Frequency tck
* Clock Cycle fDQ
* DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 PC3-12800 -DI 11 800 1.25 1600 MHz ns Mbps
* Programmable Operation: - DIMM  Latency: 5, 6,

Applications

* Inputs and outputs are SSTL-15 compatible
* VDD = VDDQ = 1.5V ± 0.075V
* SDRAMs have 8 internal banks for concurrent operation
* Differential clock inputs
* Data is read or written on both clock edges
* DRAM DLL aligns DQ and DQS transitions with cl

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