Description
The 2N5545 thru 2N5547 series of monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring matched gate-source voltage, high common-mode rejection, and low output conduc-
tance.Absolute Maximum Ratings (250
Gate-Drain or Gate-Source Voltage Gate Current
-50V
30 mA
Device Dissipation (Each Side), Ta = 25°C
(Derate 1.67mW/°C)
250 mW
Total Device Dissipation, Ta = 25 C
(Derate 2.67 mW/°C)
400 mW
Storage Temperature Range
-65°C to +200 C
Lead Temperat
2N5545-NationalSemiconductor.pdf
