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2N5902 N-Channel Monolithic Dual JFET

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Description

o0) Process 84 z10 CM oCO 0) z10 CM o 0) z10 CM O(D 0) lO z CM oIO 0) zlO CM o * zIO CM OCM 0> zIO CM 2N5902-09 N-Channel Mon.
The 2N5902 thru 2N5909 N-channel monolithic dual < JFETs is designed for ultra-low leakage Uq 1 pA) differential amplifier applications.

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Datasheet Specifications

Part number
2N5902
Manufacturer
National Semiconductor
File Size
33.17 KB
Datasheet
2N5902-NationalSemiconductor.pdf
Description
N-Channel Monolithic Dual JFET

Applications

* Dual JFETs TO-99 Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage -40V Gate Current 10 mA Device Dissipation (Each Side), Ta = 25°C (Derate 3 mW/°C) 367 mW Total Device Dissipation, Ta = 25°C (Derate 4 mW/°C) 500 mW Storage Temperature Range

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