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2N5911 - N-Channel Monolithic Dual JFET

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2N5911 Product details

Description

The 2N5911 thru2N5912 series of N-channel monolithic dual JFETs is designed for wideband, low noise differen- tial amplifiers.TO-78 Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±25V Gate-Drain or Gate-Source Voltage Gate Current -25V 50 mA Device Dissipation {Each Side), (Derate 3 mW/°C) 367 mW Total Device Dissipation, (Derate 4 mW/°C) 500 mW Storage Temperature Range -65°C to +200°C Lead Temperature (1/16" from case for 10 seconds) 300°C PIN FET 1 S 2 D 3 G 4 Cas

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