F10A60B Datasheet - Nihon Inter Electronics Corporation

F10A60B FRD

F10A60B Features

* Type : FSF10A60B OUTLINE DRAWING

* Fully Molded Isolation Case

* Ultra

* Fast Recovery

* Low Forward Voltage Drop

* Low Power Loss, High Efficiency

* High Surge Capability

* 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse V

Datasheet Details

F10A60B

Nihon Inter Electronics Corporation

87.36 KB

Frd.

📁 Related Datasheet

F1000LC120 Extra Fast Recovery Diode (IXYS)

F1001 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F100122 9-BIT BUFFER (National Semiconductor)

F100124 Hex TTL-to-ECL Translator (National Semiconductor)

F100125 Hex ECL-to-TTL Translator (National Semiconductor)

F100136 4-Stage Counter / Shift Register (National Semiconductor)

F100164 16 Input Multiplexer (Fairchild Semiconductor)

F100164 16 Input Multiplexer (National Semiconductor)

TAGS

F10A60B FRD Nihon Inter Electronics Corporation

F10A60B Distributor