Part number:
F10A60B
Manufacturer:
Nihon Inter Electronics Corporation
File Size:
87.36 KB
Description:
Frd.
* Type : FSF10A60B OUTLINE DRAWING
* Fully Molded Isolation Case
* Ultra
* Fast Recovery
* Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
* 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse V
F10A60B
Nihon Inter Electronics Corporation
87.36 KB
Frd.
📁 Related Datasheet
F1000LC120 - Extra Fast Recovery Diode
(IXYS)
WESTCODE
An IXYS Company
Date:- 20 Nov, 2003 Data Sheet Issue:- 1
Provisional Data
Extra Fast Recovery Diode Type F1000LC120
Old Type .
F1001 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F100122 - 9-BIT BUFFER
(National Semiconductor)
.
F100124 - Hex TTL-to-ECL Translator
(National Semiconductor)
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSh.
F100125 - Hex ECL-to-TTL Translator
(National Semiconductor)
.
F100136 - 4-Stage Counter / Shift Register
(National Semiconductor)
.
F100164 - 16 Input Multiplexer
(Fairchild Semiconductor)
.
F100164 - 16 Input Multiplexer
(National Semiconductor)
Printed from .freetradezone., a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer
Printed from .freetradez.
