OSF12N60C Datasheet (OCENME) - 600V N-Channel MOSFET

OSF12N60C, 600V N-Channel MOSFET

This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These d

OSF12N60C Features

* 12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V

* Low gate charge ( typical 52nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings T