Description
E2G1059-39-21 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb (2M * 9) & 64Mb (8M * 8) Concurrent RDRAM This version: Feb.1999 MS.
The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits.
Features
* Compatible with Base RDRAMs
* 600 MB/s peak transfer rate per RDRAM
* Rambus Signaling Level (RSL) interface
* Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
* 480 MB/s effective bandwidth for random 32 byte transfers