Datasheet4U Logo Datasheet4U.com

1N457 - Small Signal Diode

Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the.

📥 Download Datasheet

Datasheet preview – 1N457

Datasheet Details

Part number 1N457
Manufacturer onsemi
File Size 126.79 KB
Description Small Signal Diode
Datasheet download datasheet 1N457 Datasheet
Additional preview pages of the 1N457 datasheet.

📁 Similar Datasheet

  • 1N457 - Small Signal Diode (Fairchild Semiconductor)
  • 1N457 - SWITCHING DIODE (Microsemi Corporation)
  • 1N4570 - NOMINAL ZENER (Compensated Deuices Incorporated)
  • 1N4570 - 6.4V TEMPERATURE COMPENSATED ZENER DIODE (Digitron Semiconductors)
  • 1N4570 - TEMPERATURE COMPENSATED ZENER REFERENCE DIODES (Microsemi)
  • 1N4570-1 - TEMPERATURE COMPENSATED ZENER REFERENCE DIODES (Microsemi)
  • 1N4570-1 - Zener Reference Diode (MA-COM)
  • 1N4570-1 - Zener Reference Diode (Aeroflex)
  • 1N4570A - 6.4V TEMPERATURE COMPENSATED ZENER DIODE (Digitron Semiconductors)
  • 1N4570A - TEMPERATURE COMPENSATED ZENER REFERENCE DIODES (Microsemi)
Other Datasheets by ON Semiconductor
  • 1N457A - Small Signal Diode
  • 1N457A - Small Signal Diode
  • 1N458A - Small Signal Diode
  • 1N459 - Small Signal Diode
  • 1N459A - Small Signal Diode
  • 1N4001 - Axial Lead Standard Recovery Rectifiers
  • 1N4002 - Axial Lead Standard Recovery Rectifiers
  • 1N4003 - Axial Lead Standard Recovery Rectifiers

Full PDF Text Transcription

Click to expand full text
DATA SHEET www.onsemi.com Small Signal Diode 1N457, 1N457A ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Notes 1, 2, 3) Symbol Rating Value Unit VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non−repetitive Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 ms 70 V 200 mA A 1.0 4.0 TSTG Storage Temperature Range −65 to +200 °C TJ Operating Junction Temperature 175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2.
Published: |