20N60 Datasheet - ON Semiconductor

N-Channel MOSFET

20N60 Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 150 mW

* Ultra Low Gate Charge (Typ. Qg = 75 nC )

* Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

20N60 General Description

SuperFET MOSFET is onsemi’s first generation of high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching p.

20N60 Datasheet (420.52 KB)