Datasheet4U Logo Datasheet4U.com

2N6341 Datasheet - ON Semiconductor

2N6341 High-Power NPN Silicon Transistors

2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial military power amplifier and switching circuit applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) 2N6338 = 150 Vdc (Min) 2N6341 High DC Current Gain hFE = 30 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 V.

2N6341 Datasheet (190.50 KB)

Preview of 2N6341 PDF
2N6341 Datasheet Preview Page 2 2N6341 Datasheet Preview Page 3

Datasheet Details

Part number:

2N6341

Manufacturer:

ON Semiconductor ↗

File Size:

190.50 KB

Description:

High-power npn silicon transistors.

📁 Related Datasheet

2N6340 NPN Transistor (Motorola)

2N6340 Bipolar NPN Device (Seme LAB)

2N6340 Silicon NPN Power Transistors (SavantIC)

2N6341 NPN High Power Silicon Transistor (VPT)

2N6341 NPN POWER SILICON TRANSISTOR (Microsemi Corporation)

2N6341 NPN Transistor (Motorola)

2N6341 Silicon NPN Power Transistors (SavantIC)

2N6342 TRIACS Silicon Bidirectional Triode Thyristors (Motorola Inc)

TAGS

2N6341 High-Power NPN Silicon Transistors ON Semiconductor

2N6341 Distributor