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A1015GR - PNP Epitaxial Silicon Transistor

This page provides the datasheet information for the A1015GR, a member of the A1015 PNP Epitaxial Silicon Transistor family.

Datasheet Summary

Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Co

Features

  • Low.
  • Frequency Amplifier.
  • Collector.
  • Base Voltage: VCBO =.
  • 50 V.
  • Complement to KSC1815.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number A1015GR
Manufacturer ON Semiconductor
File Size 169.74 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet A1015GR Datasheet
Additional preview pages of the A1015GR datasheet.

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Full PDF Text Transcription

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PNP Epitaxial Silicon Transistor KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector−Base Voltage −50 V VCEO Collector−Emitter Voltage −50 V VEBO Emitter−Base Voltage −5 V IC Collector Current −150 mA IB Base Current −50 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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