A1015 - PNP Epitaxial Silicon Transistor

onsemi

General Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Co

Key Features

Low.
Frequency Amplifier.
Collector.
Base Voltage: VCBO =.
50 V.
Complement to KSC1815.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

A1015 pnp epitaxial silicon transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	A1015
Manufacturer	onsemi
File Size	169.74 KB
Description	PNP Epitaxial Silicon Transistor
Datasheet	A1015 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
A1015	Plastic-Encapsulate Transistors	DOESHARE
A1015	PNP General Purpose Transistors	WEITRON
A1015	PNP general purpose transistor	NXP
A1015	Silicon PNP Transistor	Toshiba Semiconductor
A1015	PNP Epitaxial Silicon Transistor	Elite

Other Datasheets by onsemi

Part Number	Description
A1015GR	PNP Epitaxial Silicon Transistor
A1015Y	PNP Epitaxial Silicon Transistor
A1020	One Watt High Current PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PNP Epitaxial Silicon Transistor KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector−Base Voltage −50 V VCEO Collector−Emitter Voltage −50 V VEBO Emitter−Base Voltage −5 V IC Collector Current −150 mA IB Base Current −50 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.