Datasheet4U Logo Datasheet4U.com

A1015 - PNP Epitaxial Silicon Transistor

📥 Download Datasheet

Datasheet Details

Part number A1015
Manufacturer Elite
File Size 88.64 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet A1015 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
A1015 Plastic-Encapsulate Transistors DOESHARE
A1015 PNP General Purpose Transistors WEITRON
A1015 PNP Epitaxial Silicon Transistor ON Semiconductor
A1015 PNP general purpose transistor NXP
A1015 Silicon PNP Transistor Toshiba Semiconductor

Other Datasheets by Elite

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
A1015 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collection Dissipation : PC(max) = 400mW Collector-Emitter Voltage : VCEO = -50V Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Collector Current IC -150 mA Collector Dissipation Junction Temperature Storage Temperature PC TJ TSTG 400 mW 150 oC -55~+150 oC Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current BVCBO BVCEO ICBO IC= -100µA, IE=0 IC= -0.