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A1015 Datasheet PDF

Elite A1015

PNP Epitaxial Silicon Transistor

Part No. A1015
Datasheet A1015 Download
Manufacturer
Elite
Description PNP Epitaxial Silicon Transistor
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A1015 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Collector Current IC -150 mA Collector Dissipation Junction Temperature Storage Temperature PC TJ TSTG 400 mW 150 oC -55~+150 oC

ELECTRICAL CHARACTERISTICS

(TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current BVCBO BVCEO ICBO IC= -100µA, IE=0 IC= -0.1mA, IB=0 VCB= -50V, IE=0 Emitter Cut-off Current IEBO VEB= -5V, IC=0 DC Current Gain hFE VCE= -6V, IC= -2mA Collector-Emitter Saturation Voltage VCE(sat) IC= -100mA, IB= -10mA Base-Emitter Saturation Voltage VBE(sat) IC= -100mA, IB= -10mA Base-Emitter Voltage VBE IE= -310mA Transition Frequency fT VCE= -10V, IC= -1mA f=30MHz Min Max -50 -50 -0.1 -0.1 70 400 -0.3 -1.1 -1.45 80 hFE CLASSIFICATION Classification O hFE 70-140 Y 120-240 GR 200-400 Unit V V µA µA V V V MHz Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.