The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PNP General Purpose Transistors
P b Lead(Pb)-Free
A1015
TO-92
1. EMITTER
1
2. COLLECTOR 3. BASE
2 3
MAXIMUM RATINGS* (TA=25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
-50
V
Collector-Base Voltage
VCBO
-50
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current Continuous
IC
-150
mA
Total Device Dissipation TA=25°C
PD
0.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 to + 150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage, IC = -0.
A1015 Datasheet
