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Related Siemens Semiconductor Group Datasheets

Part Number Description
Q62702-A1017 Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Q62702-A1004 Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Q62702-A1006 Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Q62702-A1025 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1028 Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)

Siemens Semiconductor Group datasheets

Q62702-A1010 Description

at TA = 25 °C, unless otherwise specified. Forward current IF=f(VF) Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz. Semiconductor Group 4 Edition A01, 23.02.95.

Q62702-A1010 Key Features

  • High voltage current controlled
  • RF resistor for RF attenuator and swirches
  • Freqency range above 1 MHz
  • Low resistance and short carrier lifetime
  • For frequencies up to 3 GHz Type BAR 64 BAR 64-04 BAR 64-05 BAR 64-06 Marking POs PPs PRs PSs Ordering code (t