A1015Y
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Pnp epitaxial silicon transistor. 98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are
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A1015 - Plastic-Encapsulate Transistors
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Plastic-Encapsulate Transistors(PNP)
General description
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FEATURES
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1. EMITTER
1
2. COLLECTOR 3. BASE
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MAXIMUM RATINGS* (TA=25°C unless otherwise n.
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• Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These De.
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DISCRETE SEMICONDUCTORS
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Collection Dissipation : PC(max) = 400mW Collector-Emitter Voltage : VCEO = -50V
Abs.
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Features
• Low-Frequency Amplifier • Collector-B.
A1015 - PNP Transistor
(Jiangsu Changjiang)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A1015
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1.EMITTER
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A1015
-0.15A , -50V PNP Plastic-Encapsulated Transistor
FEATURES
Power Dissipation
CLASSIFICATION OF hFE
Product-Rank A10.
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PNP Epitaxial Silicon Transistor
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Features
• Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These De.
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