
Part number:
AFGHL40T120RHD
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Description:
Igbt. This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superi
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onsemi | AFGHL40T120RHD | AFGHL40T120RHD | IGBT TRENCH FS 1200V 48A TO-247 | DigiKey | 0 | 0 |
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AFGHL40T120RHD
379.05 KB
Igbt. This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superi
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